DAP222WMFHTL ROHM

Data Sheet AEC-Q101 Qualified Switching Diode DAP222WMFH DAP222WM lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) High frequency switching lFeatures 1)Ultra small mold type. (EMD3F) 2)High reliability EMD3 lConstruction Silicon epitaxial planer lStructure ROHM : EMD3F dot (year week factory) lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25 C) Parameter Limits Symbol Unit V Reverse voltage (repetitive) 80 V RM Reverse voltage (DC) V 80 V R Forward voltage(repetitive peak) I 300 mA FM Average rectified forward current 100 Io mA Surge current(t=1s) I 4 A surge Power dissipation Pd 150 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C lElectrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V I =100mA Forward voltage - - 1.2 V F F Reverse current I - - 0.1 A V =70V R R Capacitance between terminals Ct - - 3.5 pF V =6V , f=1MHz R Reverse recovery time V =6V , I =5mA , R =50 trr - - 4 ns R F L www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 1/3 Data Sheet DAP222WMFH 100 100000 Ta=150 C Ta=125 C 10000 10 Ta=150 C 1000 Ta=75 C Ta=75 C 1 Ta=125 C 100 Ta=25 C 0.1 Ta=25 C 10 0.01 1 0.1 0.001 0 100 200 300 400 500 600 700 800 900 1000 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGEV (V) FORWARD VOLTAGE V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 10 910 f=1MHz Ta=25 C I =100mA F 900 n=30pcs 890 1 880 AVE:884mV 870 860 0.1 850 0 5 10 15 20 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 50 10 Ta=25 C Ta=25 C V =70V V =0V R 9 R 40 n=10pcs f=1MHz n=10pcs 8 30 7 AVE:11nA 20 6 AVE:5.03pF 10 5 0 4 I DISPERSION MAP R Ct DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 2/3 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD CURRENT:I (mA) R F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)