X-On Electronics has gained recognition as a prominent supplier of DTA013ZUBTL Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTA013ZUBTL Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTA013ZUBTL ROHM

DTA013ZUBTL electronic component of ROHM
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Part No.DTA013ZUBTL
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased PNP Digital Transtr w/built in resistors
Datasheet: DTA013ZUBTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2508 ea
Line Total: USD 0.25 
Availability - 1937
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1937
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2508
10 : USD 0.1694
100 : USD 0.1078
1000 : USD 0.0484
3000 : USD 0.0396
9000 : USD 0.0341
24000 : USD 0.0319
45000 : USD 0.0297
99000 : USD 0.0286

   
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Transistor Polarity
Typical Input Resistor
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DC Collector/Base Gain hFE Min
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Collector- Emitter Voltage VCEO Max
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Peak DC Collector Current
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Emitter- Base Voltage Vebo
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTA013ZUBTL from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA013ZUBTL and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTA013Z series Datasheet PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-416FL V -50V CC I -100mA C(MAX.) R 1k 1 DTA013ZM DTA013ZEB R 10k (VMT3) (EMT3F) 2 SOT-323FL llFeatures 1) Built-In Biasing Resistors, R = 1k, R = 10k 1 2 DTA013ZUB 2) Built-in bias resistors enable the configuration of (UMT3F) an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set llInner circuit for operation, making the circuit design easy. 4) Complementary NPN Types: DTC013Z series llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTA013ZM 1212 T2L 180 8 8000 57 (VMT3) SOT-416FL DTA013ZEB 1616 TL 180 8 3000 57 (EMT3F) SOT-323FL DTA013ZUB 2021 TL 180 8 3000 57 (UMT3F) www.rohm.com 1/7 20160225 - Rev.003 2016 ROHM Co., Ltd. All rights reserved. DTA013Z series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -10 to 5 V IN I Output current -100 mA O *1 I Collector current -100 mA C(MAX) DTA013ZM 150 *2 P Power dissipation DTA013ZEB 150 mW D DTA013ZUB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.4 I(off) CC O Input voltage V V V = -0.3V, I = -5mA -1.0 - - I(on) O O V Output voltage I = -5mA, I = -0.5mA - -70 -150 mV O(on) O I I Input current V = -5V - - -7.2 mA I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G DC current gain V = -10V, I = -5mA 30 - - - I O O R Input resistance - 0.7 1 1.3 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/7 20160225 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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