DTA015E series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value VMT3 EMT3F V -50V CC I -100mA C(MAX.) R 100k 1 DTA015EM DTA015EEB R (SC-105AA) (SC-89) 100k 2 UMT3F llFeatures 1) Built-In Biasing Resistors, R = R = 100k 1 2 2) Built-in bias resistors enable the configuration of DTA015EUB an inverter circuit without connecting external (SC-85) input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing llInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types: DTC015E series 6) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA015EM VMT3 1212 T2L 180 8 8000 50 DTA015EEB EMT3F 1616 TL 180 8 3000 50 DTA015EUB UMT3F 2021 TL 180 8 3000 50 www.rohm.com 1/7 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. DTA015E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC Input voltage V -40 to 10 V IN I Output current -20 mA O *1 I Collector current -100 mA C(MAX) DTA015EM 150 *2 P Power dissipation DTA015EEB 150 mW D DTA015EUB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -0.1mA - - -0.8 I(off) CC O Input voltage V V V = -0.3V, I = -1mA -2.6 - - I(on) O O Output voltage V I / I = -5mA / -0.5mA - -0.07 -0.15 V O(on) O I I Input current V = -5V - - -0.15 mA I I I Output current V = -50V, V = 0V - - -0.5 A O(off) CC I G DC current gain V = -10V, I = -5mA 80 - - - I O O R Input resistance - 70 100 130 k 1 R /R Resistance ratio - 0.8 1 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2/7 20121023 - Rev.001