X-On Electronics has gained recognition as a prominent supplier of DTA043EMT2L Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTA043EMT2L Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTA043EMT2L ROHM

DTA043EMT2L electronic component of ROHM
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Part No.DTA043EMT2L
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased PNP Digital Transtr w/built in resistors
Datasheet: DTA043EMT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1701: USD 0.0239 ea
Line Total: USD 40.65 
Availability - 12319
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ: 1701  Multiples: 1
Pack Size: 1
Availability Price Quantity
12319
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 1701
Multiples : 1
1701 : USD 0.0239
2000 : USD 0.0238
8000 : USD 0.0227

7760
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 1924
Multiples : 1
1924 : USD 0.0494
2500 : USD 0.0479
5000 : USD 0.0467

7663
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 1924
Multiples : 1
1924 : USD 0.0494
2500 : USD 0.0479
5000 : USD 0.0467

   
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We are delighted to provide the DTA043EMT2L from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA043EMT2L and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTA043E series Datasheet PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-416FL V -50V CC I -100mA C(MAX.) R 4.7k 1 DTA043EM DTA043EEB R 4.7k (VMT3) (EMT3F) 2 SOT-323FL llFeatures 1) Built-In Biasing Resistors, R = R = 4.7k 1 2 2) Built-in bias resistors enable the configuration of DTA043EUB an inverter circuit without connecting external (UMT3F) input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. llInner circuit 4) Complementary NPN Types: DTC043E series llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTA043EM 1212 T2L 180 8 8000 37 (VMT3) SOT-416FL DTA043EEB 1616 TL 180 8 3000 37 (EMT3F) SOT-323FL DTA043EUB 2021 TL 180 8 3000 37 (UMT3F) www.rohm.com 1/7 20160322 - Rev.003 2016 ROHM Co., Ltd. All rights reserved. DTA043E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -30 to 10 V IN I Output current -100 mA O *1 I Collector current -100 mA C(MAX) DTA043EM 150 *2 P Power dissipation DTA043EEB 150 mW D DTA043EUB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -5mA -2.2 - - I(on) O O V Output voltage I = -5mA, I = -0.5mA - -70 -150 mV O(on) O I I Input current V = -5V - - -1.8 mA I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G DC current gain V = -10V, I = -5mA 20 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/7 20160322 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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