X-On Electronics has gained recognition as a prominent supplier of DTA113ZETL Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTA113ZETL Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTA113ZETL ROHM

DTA113ZETL electronic component of ROHM
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Part No.DTA113ZETL
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased PNP 50V 100MA
Datasheet: DTA113ZETL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3165: USD 0.0129 ea
Line Total: USD 40.83 
Availability - 86835
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 3165  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1516
Multiples : 1
1516 : USD 0.0627
2500 : USD 0.0609
5000 : USD 0.0592

86835
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3165
Multiples : 1
3165 : USD 0.0129

2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1516
Multiples : 1
1516 : USD 0.0627
2500 : USD 0.0609

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
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Maximum Operating Temperature
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Brand
Pd - Power Dissipation
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We are delighted to provide the DTA113ZETL from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA113ZETL and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTA113Z series Datasheet PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-416 SOT-323 V -50V CC I -100mA C(MAX.) R 1.0k 1 DTA113ZE DTA113ZUA R 10k (EMT3) (UMT3) 2 SOT-346 llFeatures 1) Built-In Biasing Resistors, R = 1.0k, R = 2.2k 1 2 DTA113ZKA 2) Built-in bias resistors enable the configuration of (SMT3) an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set llInner circuit for operation, making the circuit design easy. 4) Complementary NPN Types: DTC113Z series llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-416 DTA113ZE 1616 TL 180 8 3000 E11 (EMT3) SOT-323 DTA113ZUA 2021 T106 180 8 3000 111 (UMT3) SOT-346 DTA113ZKA 2928 T146 180 8 3000 E11 (SMT3) www.rohm.com 1/7 20160112 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTA113Z series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -10 to 5 V IN I Output current -100 mA O *1 I Collector current -100 mA C(MAX) DTA113ZE 150 *2 P Power dissipation DTA113ZUA 200 mW D DTA113ZKA 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.3 I(off) CC O Input voltage V V V = -0.3V, I = -20mA -3.0 - - I(on) O O V Output voltage I = -10mA, I = -0.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -7.2 mA I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 33 - - - I O O R Input resistance - 0.7 1.0 1.3 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20160112 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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