DTA113Z series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value EMT3 UMT3 V -50V CC I -100mA C(MAX.) R 1k 1 DTA113ZE DTA113ZUA R SOT-416(SC-75A) SOT-323(SC-70) 10k 2 SMT3 llFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTA113ZKA an inverter circuit without connecting external SOT-346(SC-59) input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing llInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types: DTC113ZUA/ DTC113ZKA 6) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA113ZE EMT3 1616 TL 180 8 3000 E11 DTA113ZUA UMT3 2021 T106 180 8 3000 111 DTA113ZKA SMT3 2928 T146 180 8 3000 E11 www.rohm.com 1/7 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. DTA113Z series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC Input voltage V -10 to 5 V IN I Output current -100 mA O *1 I Collector current -100 mA C(MAX) DTA113ZE 150 *2 P Power dissipation DTA113ZUA 200 mW D DTA113ZKA 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.3 I(off) CC O Input voltage V V V = -0.3V, I = -20mA -3 - - I(on) O O Output voltage V I / I = -10mA / -0.5mA - -0.1 -0.3 V O(on) O I I Input current V = -5V - - -7.2 mA I I I Output current V = -50V, V = 0V - - -0.5 A O(off) CC I G DC current gain V = -5V, I = -5mA 33 - - - I O O R Input resistance - 0.7 1 1.3 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2/7 20121023 - Rev.001