DTA114E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) llOutline Parameter Value VMT3 EMT3F V -50V CC I -100mA C(MAX.) R 10k 1 DTA114EM DTA114EEB R (SC-105AA) (SC-89) 10k 2 EMT3 UMT3F llFeatures 1) Built-In Biasing Resistors, R = R = 10k 1 2 2) Built-in bias resistors enable the configuration of DTA114EE DTA114EUB an inverter circuit without connecting external SOT-416(SC-75A) (SC-85) input resistors (see inner circuit) . UMT3 SMT3 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. DTA114EUA DTA114EKA 4) Only the on/off conditions need to be set SOT-323(SC-70) SOT-346(SC-59) for operation, making the circuit design easy. 5) Complementary NPN Types: DTC114E series 6) Complex transistors: EMB11/ UMB11N/ IMB11A/ llInner circuit UMA9N/ FMA9A PNP type 7) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA114EM VMT3 1212 T2L 180 8 8000 14 DTA114EEB EMT3F 1616 TL 180 8 3000 14 DTA114EE EMT3 1616 TL 180 8 3000 14 DTA114EUB UMT3F 2021 TL 180 8 3000 14 DTA114EUA UMT3 2021 T106 180 8 3000 14 DTA114EKA SMT3 2928 T146 180 8 3000 14 www.rohm.com 1/10 20130912 - Rev.002 2013 ROHM Co., Ltd. All rights reserved. DTA114E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V -50 V CC V Input voltage -40 to 10 V IN I Output current -50 mA O *1 I Collector current -100 mA C(MAX) DTA114EM 150 DTA114EEB 150 DTA114EE 150 *2 Power dissipation P mW D DTA114EUB 200 DTA114EUA 200 DTA114EKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -10mA -3 - - I(on) O O V I / I = -10mA / -0.5mA Output voltage - -0.1 -0.3 V O(on) O I I Input current V = -5V - - -0.88 mA I I I V = -50V, V = 0V Output current - - -0.5 A O(off) CC I G DC current gain V = -5V, I = -5mA 30 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2/10 2013 ROHM Co., Ltd. All rights reserved. 20130912 - Rev.002