DTA114TCA HZG PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-23 V -50V CEO I -100mA C R 10k 1 (SST3) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary NPN Types: DTC114TCA HZG llApplication INVERTER, INTERFACE,DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTA114TCA HZG 2924 T116 180 8 3000 94 (SST3) www.rohm.com 1/4 20160711 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTA114TCA HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -5 V EBO Collector current I -100 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -5 - - V EBO E Collector cut-off current I V = -50V - - -500 nA CBO CB Emitter cut-off current I V = -4V - - -500 nA EBO EB I = -10mA, I = -1mA Collector-emitter saturation voltage V - - -300 mV CE(sat) C B h DC current gain V = -5V, I = -1mA 100 250 600 - FE CE C R Input resistance - 7 10 13 k 1 V = -10V, I = 5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). *3 Characteristics of built-in transistor www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/4 20160711 - Rev.001