DTA114TETL ROHM

DTA114T series PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet llOutline Parameter Value SOT-723 SOT-416FL V -50V CEO I -100mA C R 10k 1 DTA114TM DTA114TEB (VMT3) (EMT3F) llFeatures 1) Built-In Biasing Resistor SOT-416 SOT-323FL 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . DTA114TE DTA114TUB 3) Only the on/off conditions need to be set (EMT3) (UMT3F) for operation, making the circuit design easy. SOT-323 SOT-346 4) Complementary NPN Types: DTC114T series llApplication DTA114TUA DTA114TKA (UMT3) (SMT3) INVERTER, INTERFACE,DRIVER llInner circuit DTA114TM/ DTA114TEB/ DTA114TUB DTA114TE/ DTA114TUA/ DTA114TKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA114TM SOT-723 1212 T2L 180 8 8000 94 DTA114TEB SOT-416FL 1616 TL 180 8 3000 94 DTA114TE SOT-416 1616 TL 180 8 3000 94 DTA114TUB SOT-323FL 2021 TL 180 8 3000 94 DTA114TUA SOT-323 2021 T106 180 8 3000 94 DTA114TKA SOT-346 2928 T146 180 8 3000 94 www.rohm.com 1/9 20151211 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTA114T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C DTA114TM 150 DTA114TEB 150 DTA114TE 150 *1 P Power dissipation mW D DTA114TUB 200 DTA114TUA 200 DTA114TKA 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I Collector cut-off current V = -50V - - -500 nA CBO CB Emitter cut-off current I V = -4V - - -500 nA EBO EB I = -10mA, I = -1mA Collector-emitter saturation voltage V - - -300 mV CE(sat) C B DC current gain h V = -5V, I = -1mA 100 250 600 - FE CE C Input resistance R - 7 10 13 k 1 V = -10V, I = 5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Characteristics of built-in transistor www.rohm.com 2/9 20151211 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.