DTA115G series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value UMT3 SMT3 V -50V CEO I -100mA C R 100k DTA115GUA DTA115GKA SOT-323(SC-70) SOT-346(SC-59) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Complementary NPN Types: DTC115G series 5) Lead Free/RoHS Compliant. B: BASE C: COLLECTOR E: EMITTER llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA115GUA UMT3 2021 T106 180 8 3000 K19 DTA115GKA SMT3 2928 T146 180 8 3000 K19 www.rohm.com 1/5 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs DTA115G series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C DTA115GUA 200 *1 P Power dissipation mW D DTA115GKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV I = -72A Emitter-base breakdown voltage -5 - - V EBO E I Collector cut-off current V = -50V - - -0.5 A CBO CB I V = -4V Emitter cut-off current -30 - -58 A EBO EB Collector-emitter saturation voltage V I / I = -5mA / -0.25mA - - -0.3 V CE(sat) C B h V = -5V, I =-5mA DC current gain 82 - - - FE CE C Emitter-base resistance R - 70 100 130 k V = -10V, I = 5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com 2/5 2012 ROHM Co., Ltd. All rights reserved. 20121023 - Rev.001 Not Recommended for New Designs