DTA123JEB HZG PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-416FL V -50V CC SC-89 I -100mA C(MAX.) R 2.2k 1 R 47k (EMT3F) 2 llFeatures llInner circuit 1) Built-In Biasing Resistors, R = 2.2k, R = 47k 1 2 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary NPN Types: DTC123JEB HZG llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-416FL DTA123JEB HZG 1616 TL 180 8 3000 E32 (EMT3F) www.rohm.com 1/5 20160725 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTA123JEB HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -12 to 5 V IN I Output current -100 mA O *1 I Collector current -100 mA C(MAX) *2 P Power dissipation 150 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -5mA -1.1 - - I(on) O O V I = -5mA, I = -0.25mA Output voltage - -100 -300 mV O(on) O I I V = -5V Input current - - -3.6 mA I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G V = -5V, I = -10mA DC current gain 80 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 17 21 26 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/5 20160725 - Rev.001