DTA123YE FRA PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-416 V -50V CC SC-75A I -100mA C(MAX.) R 2.2k 1 R 10k (EMT3) 2 llFeatures llInner circuit 1) Built-In Biasing Resistors, R = 2.2k, R = 10k 1 2 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary NPN Types: DTC123YE FRA llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-416 DTA123YE FRA 1616 TL 180 8 3000 52 (EMT3) www.rohm.com 1/5 20161006 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTA123YE FRA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -12 to 5 V IN I Output current -100 mA O *1 I Collector current -100 mA C(MAX) *2 P Power dissipation 150 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.3 I(off) CC O Input voltage V V V = -0.3V, I = -20mA -3.0 - - I(on) O O V Output voltage I = -10mA, I = -0.5mA - -100 -300 mV O(on) O I I V = -5V Input current - - -3.8 mA I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G V = -5V, I = -10mA DC current gain 33 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 3.6 4.5 5.5 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/5 20161006 - Rev.001