X-On Electronics has gained recognition as a prominent supplier of DTA124GKAT146 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTA124GKAT146 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTA124GKAT146 ROHM

DTA124GKAT146 electronic component of ROHM
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See Product Specifications
Part No.DTA124GKAT146
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased PNP 50V 100MA
Datasheet: DTA124GKAT146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2084: USD 0.0442 ea
Line Total: USD 92.11 
Availability - 2900
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ: 2084  Multiples: 1
Pack Size: 1
Availability Price Quantity
2900
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 2084
Multiples : 1
2084 : USD 0.0442
2500 : USD 0.0428

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
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We are delighted to provide the DTA124GKAT146 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA124GKAT146 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTA124GKA Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) llOutline Parameter Value SMT3 V -50V CEO I -100mA C R 22k SOT-346(SC-59) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Complementary NPN Types: DTC124G series 5) Lead Free/RoHS Compliant. B: BASE C: COLLECTOR E: EMITTER llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA124GKA SMT3 2928 T146 180 8 3000 K15 www.rohm.com 1/4 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs DTA124GKA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C *1 P Power dissipation 200 mW/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -330A -5 - - V EBO E I V = -50V Collector cut-off current - - -0.5 A CBO CB I Emitter cut-off current V = -4V -140 - -260 A EBO EB Collector-emitter saturation voltage V I / I = -10mA / -0.5mA - - -0.3 V CE(sat) C B h DC current gain V = -5V, I =-5mA 56 - - - FE CE C Emitter-base resistance R - 15.4 22 28.6 k V = -10V, I = 5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2/4 20121023 - Rev.001 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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