X-On Electronics has gained recognition as a prominent supplier of DTA124TMT2L Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTA124TMT2L Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTA124TMT2L ROHM

DTA124TMT2L electronic component of ROHM
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Part No.DTA124TMT2L
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased PNP 50V 100MA
Datasheet: DTA124TMT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2084: USD 0.0442 ea
Line Total: USD 92.11 
Availability - 7760
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ: 2084  Multiples: 1
Pack Size: 1
Availability Price Quantity
7760
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 2084
Multiples : 1
2084 : USD 0.0442
2500 : USD 0.0428
5000 : USD 0.0417

   
Manufacturer
Product Category
RoHS - XON
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Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
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Cnhts
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We are delighted to provide the DTA124TMT2L from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA124TMT2L and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTA124T series Datasheet PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-323 V -50V CEO I -100mA C R 22k DTA124TM DTA124TUA (VMT3) (UMT3) llFeatures 1) Built-In Biasing Resistors, R = 22k 1 llApplication 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external INVERTER, INTERFACE, DRIVER input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary NPN Types: DTC124T series llInner circuit DTA124TM DTA124TUA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTA124TM 1212 T2L 180 8 8000 95 (VMT3) SOT-323 DTA124TUA 2021 T106 180 8 3000 95 (UMT3) www.rohm.com 1/5 20160905 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. DTA124T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO *1 I Collector current -100 mA C DTA124TM 150 *2 P Power dissipation mW D DTA124TUA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I Collector cut-off current V = -50V - - -500 nA CBO CB I V = -4V Emitter cut-off current - - -500 nA EBO EB Collector-emitter saturation voltage V I = -5mA, I = -0.5mA - - -300 mV CE(sat) C B h V = -5V, I = -1mA DC current gain 100 250 600 - FE CE C R Input resistance - 15.4 22 28.6 k 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 20160905 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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