DTA143E series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value VMT3 EMT3F V -50V CC I -100mA C(MAX.) R 4.7k 1 DTA143EM DTA143EEB R (SC-105AA) (SC-89) 4.7k 2 EMT3 UMT3F llFeatures 1) Built-In Biasing Resistors, R = R = 4.7k 1 2 2) Built-in bias resistors enable the configuration of DTA143EE DTA143EUB an inverter circuit without connecting external SOT-416(SC-75A) (SC-85) input resistors (see inner circuit) . UMT3 SMT3 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary NPN Types: DTC143E series DTA143EUA DTA143EKA SOT-323(SC-70) SOT-346(SC-59) llApplication INVERTER,INTERFACE,DRIVER llInner circuit DTA143EM/ DTA143EEB/ DTA143EUB DTA143EE/ DTA143EUA/ DTA143EKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA143EM VMT3 1212 T2L 180 8 8000 13 DTA143EEB EMT3F 1616 TL 180 8 3000 13 DTA143EE EMT3 1616 TL 180 8 3000 13 DTA143EUB UMT3F 2021 TL 180 8 3000 13 DTA143EUA UMT3 2021 T106 180 8 3000 13 DTA143EKA SMT3 2928 T146 180 8 3000 13 www.rohm.com 1/10 20150311 - Rev.004 2015 ROHM Co., Ltd. All rights reserved. DTA143E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V -50 V CC V Input voltage -30 to 10 V IN I Output current -100 mA O *1 I Collector current -100 mA C(MAX) DTA143EM 150 DTA143EEB 150 DTA143EE 150 *2 Power dissipation P mW D DTA143EUB 200 DTA143EUA 200 DTA143EKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -20mA -3.0 - - I(on) O O V I / I = -10mA / -0.5mA Output voltage - -100 -300 mV O(on) O I I Input current V = -5V - - -1.8 mA I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I G DC current gain V = -5V, I = -10mA 30 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. www.rohm.com 2/10 2015 ROHM Co., Ltd. All rights reserved. 20150311 - Rev.004