X-On Electronics has gained recognition as a prominent supplier of DTA143TMT2L Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTA143TMT2L Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTA143TMT2L ROHM

DTA143TMT2L electronic component of ROHM
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Part No.DTA143TMT2L
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Trans Digital BJT PNP 50V 100mA 3-Pin VMT T/R
Datasheet: DTA143TMT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2084: USD 0.0442 ea
Line Total: USD 92.11 
Availability - 7653
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ: 2084  Multiples: 1
Pack Size: 1
Availability Price Quantity
7653
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 2084
Multiples : 1
2084 : USD 0.0442
2500 : USD 0.0428
5000 : USD 0.0417

7760
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 234
Multiples : 1
234 : USD 0.1684
500 : USD 0.1255
1000 : USD 0.1111
2000 : USD 0.0988
8000 : USD 0.0799

   
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RoHS - XON
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Transistor Polarity
Typical Input Resistor
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
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Maximum Operating Temperature
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We are delighted to provide the DTA143TMT2L from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA143TMT2L and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTA143T series PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet llOutline Parameter Value SOT-723 SOT-416FL V -50V CEO I -100mA C R 4.7k 1 DTA143TM DTA143TEB (VMT3) (EMT3F) llFeatures 1) Built-In Biasing Resistor SOT-416 SOT-323FL 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . DTA143TE DTA143TUB 3) Only the on/off conditions need to be set (EMT3) (UMT3F) for operation, making the circuit design easy. SOT-323 SOT-346 4) Complementary NPN Types: DTC143T series llApplication DTA143TUA DTA143TKA (UMT3) (SMT3) INVERTER, INTERFACE,DRIVER llInner circuit DTA143TM/ DTA143TEB/ DTA143TUB DTA143TE/ DTA143TUA/ DTA143TKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA143TM SOT-723 1212 T2L 180 8 8000 93 DTA143TEB SOT-416FL 1616 TL 180 8 3000 93 DTA143TE SOT-416 1616 TL 180 8 3000 93 DTA143TUB SOT-323FL 2021 TL 180 8 3000 93 DTA143TUA SOT-323 2021 T106 180 8 3000 93 DTA143TKA SOT-346 2928 T146 180 8 3000 93 www.rohm.com 1/9 20160123 - Rev.003 2016 ROHM Co., Ltd. All rights reserved. DTA143T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C DTA143TM 150 DTA143TEB 150 DTA143TE 150 *1 P Power dissipation mW D DTA143TUB 200 DTA143TUA 200 DTA143TKA 200 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I Collector cut-off current V = -50V - - -500 nA CBO CB Emitter cut-off current I V = -4V - - -500 nA EBO EB I = -5mA, I = -0.25mA Collector-emitter saturation voltage V - - -300 mV C B CE(sat) DC current gain h V = -5V, I = -1mA 100 250 600 - FE CE C Input resistance R - 3.29 4.7 6.11 k 1 V = -10V, I = 5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Characteristics of built-in transistor www.rohm.com 2/9 20160123 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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