DTA144E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) llOutline Parameter Value VMT3 EMT3F V -50V CC I -100mA C(MAX.) R 47k 1 DTA144EM DTA144EEB R (SC-105AA) (SC-89) 47k 2 EMT3 UMT3F llFeatures 1) Built-In Biasing Resistors, R = R = 47k 1 2 2) Built-in bias resistors enable the configuration of DTA144EE DTA144EUB an inverter circuit without connecting external SOT-416(SC-75A) (SC-85) input resistors (see inner circuit) . UMT3 SMT3 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. DTA144EUA DTA144EKA 4) Only the on/off conditions need to be set SOT-323(SC-70) SOT-346(SC-59) for operation, making the circuit design easy. 5) Complementary NPN Types: DTC144E series 6) Complex transistors: EMB2/ UMB5N/ IMB2A/ llInner circuit EMA2/ UMA2N/ FMA2A PNP type 7) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA144EM VMT3 1212 T2L 180 8 8000 16 DTA144EEB EMT3F 1616 TL 180 8 3000 16 DTA144EE EMT3 1616 TL 180 8 3000 16 DTA144EUB UMT3F 2021 TL 180 8 3000 16 DTA144EUA UMT3 2021 T106 180 8 3000 16 DTA144EKA SMT3 2928 T146 180 8 3000 16 www.rohm.com 1/10 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. DTA144E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V -50 V CC V Input voltage -40 to 10 V IN I Output current -30 mA O *1 I Collector current -100 mA C(MAX) DTA144EM 150 DTA144EEB 150 DTA144EE 150 *2 Power dissipation P mW D DTA144EUB 200 DTA144EUA 200 DTA144EKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -2mA -3 - - I(on) O O V I / I = -10mA / -0.5mA Output voltage - -0.1 -0.3 V O(on) O I I Input current V = -5V - - -0.18 mA I I I V = -50V, V = 0V Output current - - -0.5 A O(off) CC I G DC current gain V = -5V, I = -5mA 68 - - - I O O R Input resistance - 32.9 47 61.1 k 1 R /R Resistance ratio - 0.8 1 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2/10 2012 ROHM Co., Ltd. All rights reserved. 20121023 - Rev.001