DTA144E series PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet llOutline Parameter Value SOT-723 SOT-416FL V -50V CC I -100mA C(MAX.) R 47k 1 DTA144EM DTA144EEB R 47k (VMT3) (EMT3F) 2 SOT-416 SOT-323FL llFeatures 1) Built-In Biasing Resistors, R = R = 47k 1 2 2) Built-in bias resistors enable the configuration of DTA144EE DTA144EUB an inverter circuit without connecting external (EMT3) (UMT3F) input resistors (see inner circuit) . SOT-323 SOT-346 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary NPN Types: DTC144E series llApplication INVERTER, INTERFACE, DRIVER DTA144EUA DTA144EKA (UMT3) (SMT3) llInner circuit DTA144EM/ DTA144EEB/ DTA144EUB DTA144EE/ DTA144EUA/ DTA144EKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA144EM SOT-723 1212 T2L 180 8 8000 16 DTA144EEB SOT-416FL 1616 TL 180 8 3000 16 DTA144EE SOT-416 1616 TL 180 8 3000 16 DTA144EUB SOT-323FL 2021 TL 180 8 3000 16 DTA144EUA SOT-323 2021 T106 180 8 3000 16 DTA144EKA SOT-346 2928 T146 180 8 3000 16 www.rohm.com 1/10 20151001 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTA144E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V -50 V CC V Input voltage -40 to 10 V IN I Output current -30 mA O *1 I Collector current -100 mA C(MAX) DTA144EM 150 DTA144EEB 150 DTA144EE 150 *2 Power dissipation P mW D DTA144EUB 200 DTA144EUA 200 DTA144EKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -2mA -3.0 - - I(on) O O V I = -10mA, I = -0.5mA Output voltage - -100 -300 mV O(on) O I I Input current V = -5V - - -180 A I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 68 - - - I O O R Input resistance - 32.9 47 61.1 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/10 2015 ROHM Co., Ltd. All rights reserved. 20151001 - Rev.002