X-On Electronics has gained recognition as a prominent supplier of DTA144GKAT146 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTA144GKAT146 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTA144GKAT146 ROHM

DTA144GKAT146 electronic component of ROHM
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Part No.DTA144GKAT146
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased PNP 50V 100MA
Datasheet: DTA144GKAT146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2084: USD 0.0442 ea
Line Total: USD 92.11 
Availability - 2910
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ: 2084  Multiples: 1
Pack Size: 1

 DTA144GKAT146 More Buying Options & Price Grid(s)

Availability Price Quantity
2910
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 2084
Multiples : 1
2084 : USD 0.0442
2500 : USD 0.0428

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTA144GKAT146 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA144GKAT146 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

DTA144G series PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value UMT3 SMT3 V -50V CEO I -100mA C R 47k DTA144GUA DTA144GKA SOT-323(SC-70) SOT-346(SC-59) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Complementary NPN Types: DTC144G series 5) Lead Free/RoHS Compliant. B: BASE C: COLLECTOR E: EMITTER llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTA144GUA UMT3 2021 T106 180 8 3000 K16 DTA144GKA SMT3 2928 T146 180 8 3000 K16 www.rohm.com 1/5 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs DTA144G series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C DTA144GUA 200 *1 P Power dissipation mW D DTA144GKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV I = -160A Emitter-base breakdown voltage -5 - - V EBO E I Collector cut-off current V = -50V - - -0.5 A CBO CB I V = -4V Emitter cut-off current -65 - -130 A EBO EB Collector-emitter saturation voltage V I / I = -10mA / -0.5mA - - -0.3 V CE(sat) C B h V = -5V, I =-5mA DC current gain 68 - - - FE CE C Emitter-base resistance R - 32.9 47 61.1 k V = -10V, I = 5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com 2/5 2012 ROHM Co., Ltd. All rights reserved. 20121023 - Rev.001 Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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