DTB113EC -500mA/-50V Digital transistor (with built-in resistors) Datasheet llOutline Parameter Value SOT-23 V -50V CC I -500mA C(MAX.) R 1.0k 1 R 1.0k (SST3) 2 llFeatures llInner circuit 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit) 2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device desigh easy. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTB113EC 2924 T116 180 8 3000 F11 (SST3) www.rohm.com 1/5 20150818 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. DTB113EC Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -10 to 10 V IN *1 I Collector current -500 mA C(MAX) *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -20mA -3.0 - - I(on) O O V Output voltage I / I = -50mA / -2.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -7.2 mA I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I *3 G DC current gain V = -5V, I = -50mA 33 - - - I O O R Input resistance - 0.7 1.0 1.3 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/5 2015 ROHM Co., Ltd. All rights reserved. 20150818 - Rev.001