X-On Electronics has gained recognition as a prominent supplier of DTB113EKT146 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTB113EKT146 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTB113EKT146 ROHM

Hot DTB113EKT146 electronic component of ROHM
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Part No.DTB113EKT146
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DIGITAL PNP 50V 500MA SMD3
Datasheet: DTB113EKT146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
521: USD 0.0078 ea
Line Total: USD 4.06 
Availability - 2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 521  Multiples: 1
Pack Size: 1
Availability Price Quantity
3543
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4554
10 : USD 0.3003
100 : USD 0.1507
1000 : USD 0.1298
3000 : USD 0.1122
9000 : USD 0.0913

4243
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 691
Multiples : 1
691 : USD 0.0589
1000 : USD 0.0587
2000 : USD 0.0584

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 521
Multiples : 1
521 : USD 0.0078
1000 : USD 0.0065
3000 : USD 0.004

1886
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 269
Multiples : 1
269 : USD 0.3789
500 : USD 0.3653
1000 : USD 0.3535

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
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We are delighted to provide the DTB113EKT146 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTB113EKT146 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTB113EK -500mA/-50V Digital transistor (with built-in resistors) Datasheet llOutline Parameter Value SOT-346 V -50V CC SC-59 I -500mA C(MAX.) R 1.0k 1 R 1.0k (SMT3) 2 llFeatures llInner circuit 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit) 2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device desigh easy. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 DTB113EK 2928 T146 180 8 3000 F11 (SMT3) www.rohm.com 1/5 20150821 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTB113EK Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -10 to 10 V IN *1 I Collector current -500 mA C(MAX) *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -20mA -3.0 - - I(on) O O V Output voltage I = -50mA, I = -2.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -7.2 mA I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I *3 G DC current gain V = -5V, I = -50mA 33 - - - I O O R Input resistance - 0.7 1.0 1.3 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 Pulsed www.rohm.com 2/5 2015 ROHM Co., Ltd. All rights reserved. 20150821 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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