DTB114EC PNP -500mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet llOutline Parameter Value SOT-23 V -50V CC I -500mA C(MAX.) R 10k 1 R 10k (SST3) 2 llFeatures llInner circuit 1) Built-In Biasing Resistors, R = R = 10k 1 2 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary NPN Type: DTD114EC llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTB114EC 2924 T116 180 8 3000 F14 (SST3) www.rohm.com 1/5 20160208 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTB114EC Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -40 to 10 V IN *1 I Collector current -500 mA C(MAX) *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -10mA -3.0 - - I(on) O O V Output voltage I = -50mA, I = -2.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -880 A I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I *3 G DC current gain V = -5V, I = -50mA 56 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 20160208 - Rev.001