DTB114GC -500mA/-50V Digital transistor (with built-in resistor) Datasheet llOutline Parameter Value SOT-23 V -50V CEO I -500mA C R 10k (SST3) llFeatures llInner circuit 1) Built-In Biasing Resistors, R = 10k 2) Complementary NPN Types: DTD114GC llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTB114GC 2924 T116 180 8 3000 L14 (SST3) www.rohm.com 1/4 20160209 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTB114GC Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -500 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -720A -5 - - V EBO E I V = -50V Collector cut-off current - - -500 nA CBO CB I V = -4V Emitter cut-off current -300 - -580 A EBO EB Collector-emitter saturation voltage V I = -50mA, I = -2.5mA - - -300 mV CE(sat) C B *2 h V = -5V, I =-50mA DC current gain 56 - - - FE CE C Emitter-base resistance R - 7 10 13 k V = -10V, I = 50mA, CE E *3 f Transition frequency - 200 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Pulsed *3 Characteristics of built-in transistor. www.rohm.com 2/4 2016 ROHM Co., Ltd. All rights reserved. 20160209 - Rev.001