DTB114GK -500mA/-50V Digital transistor (with built-in resistors) Datasheet llOutline Parameter Value SOT-346 V -50V CEO SC-59 I -500mA C R 10k (SMT3) llFeatures llInner circuit 1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2)Only the on/off conditions need to be set for operation, making device desigh easy. 3)Higher mounting densities can be achieved. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 DTB114GK 2928 T146 180 8 3000 L14 (SMT3) www.rohm.com 1/4 20150903 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTB114GK Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -500 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -720A -5 - - V EBO E I V = -50V Collector cut-off current - - -500 nA CBO CB I V = -4V Emitter cut-off current -300 - -580 A EBO EB Collector-emitter saturation voltage V I = -50mA, I = -2.5mA - - -300 mV CE(sat) C B *2 h V = -5V, I =-50mA DC current gain 56 - - - FE CE C Emitter-base resistance R - 7 10 13 k V = -10V, I = 50mA, CE E *3 f Transition frequency - 200 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Pulsed *3 Characteristics of built-in transistor. www.rohm.com 2/4 2015 ROHM Co., Ltd. All rights reserved. 20150903 - Rev.002