X-On Electronics has gained recognition as a prominent supplier of DTB123YUT106 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTB123YUT106 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTB123YUT106 ROHM

DTB123YUT106 electronic component of ROHM
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See Product Specifications
Part No.DTB123YUT106
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased TRANS DIGI BJT PNP 500MA 3PIN
Datasheet: DTB123YUT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4092 ea
Line Total: USD 0.41 
Availability - 3616
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3616
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4092
10 : USD 0.2519
100 : USD 0.1199
1000 : USD 0.1089
3000 : USD 0.0913
9000 : USD 0.0759
24000 : USD 0.0737
45000 : USD 0.0704
99000 : USD 0.0693

222
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 229
Multiples : 1
229 : USD 0.3947

1117
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 224
Multiples : 1
224 : USD 0.1762
500 : USD 0.1514
1000 : USD 0.1435

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTB123YUT106 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTB123YUT106 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTB123YU -500mA/-50V Digital transistor (with built-in resistors) Datasheet llOutline Parameter Value SOT-323 V -50V CC SC-70 I -500mA C R 2.2k 1 R 10k (UMT3) 2 llFeatures llInner circuit 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit) 2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device desigh easy. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 DTB123YU 2021 T106 180 8 3000 F52 (UMT3) www.rohm.com 1/5 20150911 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTB123YU Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -12 to 5 V IN *1 I Collector current -500 mA C *2 P Power dissipation 200 mW/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.3 I(off) CC O Input voltage V V V = -0.3V, I = -20mA -2.0 - - I(on) O O V Output voltage I = -50mA, I = -2.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -3.0 mA I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I *3 G DC current gain V = -5V, I = -50mA 56 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 3.6 4.5 5.5 - 2 1 V = -10V, I = 50mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 Pulsed www.rohm.com 2/5 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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