DTB143TKT146 ROHM

DTB143TK Transistors -500mA / -40V Digital transistors (with built-in resistor) DTB143TK z External dimensions (Unit : mm) z Applications Inverter, Interface, Driver 2.9 1.1 0.4 0.8 z Features (3) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). ( ) ( ) 2 1 2) The bias resistors consist of thin-film resistors with 0.95 0.95 complete isolation to allow positive biasing of the input. 0.15 1.9 They also have the advantage of almost completely Each lead has same dimension eliminating parasitic effects. (1) Emitter ROHM : SMT3 3) Only the on / off conditions need to be set for EIAJ : SC-59 (2) Base Abbreviated symbol : F93 (3) Collector operation, making the device design easy. z Equivalent circuit z Structure PNP epitaxial planar silicon transistor (Resistor built-in type) C B z Packaging specifications R1 Package SMT3 E Packaging type Taping B : Base Code T146 C : Collector Basic ordering E : Emitter 3000 unit (pieces) Part No. R1=4.7k DTB143TK z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Rev.B 1/2 1.6 2.8 0.3Min.DTB143TK Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 50 VIC= 50A Collector-emitter breakdown voltage BVCEO 40 V IC= 1mA Emitter-base breakdown voltage BVEBO 5 V IE= 50A Collector cutoff current ICBO 0.5 A VCB= 50V Emitter cutoff current IEBO 0.5 A VEB= 4V Collector-emitter saturation voltage VCE(sat) 0.3 V IC/IB= 50mA/2.5mA DC current transfer ratio hFE 100 250 600 VCE= 5V, IC= 50mA Input resistance R1 3.29 4.7 6.11 k Transition frequency fT 200 MHz VCE= 10V, IE=50mA, f=100MHz Characteristics of built-in transistor z Electrical characteristic curves 1k -1 VCE= 5V lC/lB=20 500 -500m Ta=100 C 200 -200m 25 C Ta=100 C 100 -100m 40 C 25 C 40 C 50 -50m 20 -20m 10 -10m 5 -5m 2 -2m 1 -1m -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m COLLECTOR CURRENT : I A) COLLECTOR CURRENT : IC (A) C ( Fig.1 DC current gain vs. collectorcurrent Fig.2Collector-emitter saturation voltage vs. collector current Rev.B 2/2 DC CURRENT GAIN : h FE COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)