X-On Electronics has gained recognition as a prominent supplier of DTB713ZMT2L Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTB713ZMT2L Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTB713ZMT2L ROHM

DTB713ZMT2L electronic component of ROHM
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Part No.DTB713ZMT2L
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased DIGITAL PNP 30V; 200mA
Datasheet: DTB713ZMT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
878: USD 0.1084 ea
Line Total: USD 95.18 
Availability - 3866
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ: 878  Multiples: 1
Pack Size: 1
Availability Price Quantity
3866
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 878
Multiples : 1
878 : USD 0.1084
1000 : USD 0.1049
2500 : USD 0.1017

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Maximum Operating Frequency
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Output Voltage
Cnhts
Hts Code
Maximum Dc Collector Current
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTB713ZMT2L from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTB713ZMT2L and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTB713Z series Datasheet PNP -200mA -30V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value OUT OUT V -30V CC IN IN I -200mA C(MAX.) GND GND R 1.0k W 1 DTB713ZM DTB713ZE R 10k W (SC-105AA) SOT-416 (SC-75A) 2 lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types :DTD713Z series 6) Lead Free/RoHS Compliant. l Application Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) DTB713ZM VMT3 1212 T2L 180 8 8,000 P11 DTB713ZE EMT3 1616 TL 180 8 3,000 P11 www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.11 - Rev.C 1/6Data Sheet DTB713Z series lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Supply voltage -30 V CC V V Input voltage -10 to +5 IN *1 -200 mA Collector current I C(MAX.) *2 150 mW Power dissipation P D T 150 C Junction temperature j T C Range of storage temperature -55 to +150 stg lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit V V = -5V, I = -100mA - - -0.3 I(off) CC O Input voltage V V V = -0.3V, I = -20mA - - -2.5 I(on) O O V I / I = -50mA / -2.5mA Output voltage - -0.07 -0.3 V O I O(on) I V = -5V Input current - - -6.4 mA I I I V = -30V, V = 0V Output current - - -0.5 mA O(off) CC I DC current gain G V = -2V, I = -100mA 140 - - - I O O Input resistance R - 0.7 1.0 1.3 k W 1 R /R Resistance ratio - 8 10 12 - 2 1 V = -10V, I = 5mA, *1 CE E Transition frequency f - 260 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.11 - Rev.C 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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