X-On Electronics has gained recognition as a prominent supplier of DTC043XEBTL Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC043XEBTL Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC043XEBTL ROHM

DTC043XEBTL electronic component of ROHM
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See Product Specifications
Part No.DTC043XEBTL
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount EMT3F (SOT-416FL)
Datasheet: DTC043XEBTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
485: USD 0.0839 ea
Line Total: USD 40.69 
Availability - 30555
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 485  Multiples: 1
Pack Size: 1
Availability Price Quantity
8281
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1112
Multiples : 1
1112 : USD 0.0856
2500 : USD 0.083
5000 : USD 0.0807

30555
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 485
Multiples : 1
485 : USD 0.0839
562 : USD 0.0723
1000 : USD 0.0636
2000 : USD 0.0377
3000 : USD 0.0325
6000 : USD 0.0306
12000 : USD 0.0286

   
Manufacturer
Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTC043XEBTL from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC043XEBTL and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTC043X series Datasheet NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-416FL V 50V CC I 100mA C(MAX.) R 4.7k 1 DTC043XM DTC043XEB R 10k (VMT3) (EMT3F) 2 SOT-323FL llFeatures 1) Built-In Biasing Resistors, R = 4.7k, R = 10k 1 2 DTC043XUB 2) Built-in bias resistors enable the configuration of (UMT3F) an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set llInner circuit for operation, making the circuit design easy. 4) Complementary PNP Types: DTA043X series llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTC043XM 1212 T2L 180 8 8000 68 (VMT3) SOT-416FL DTC043XEB 1616 TL 180 8 3000 68 (EMT3F) SOT-323FL DTC043XUB 2021 TL 180 8 3000 68 (UMT3F) www.rohm.com 1/7 20160408 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. DTC043X series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage 20 to -7 V IN I Output current 100 mA O *1 I Collector current 100 mA C(MAX) DTC043XM 150 *2 P Power dissipation DTC043XEB 150 mW D DTC043XUB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 5mA 2.5 - - I(on) O O V Output voltage I = 5mA, I = 0.5mA - 50 150 mV O(on) O I I Input current V = 5V - - 1.8 mA I I I Output current V = 50V, V = 0V - - 500 nA O(off) CC I G DC current gain V = 10V, I = 5mA 35 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 1.7 2.1 2.6 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/7 20160408 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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