DTC113Z series Datasheet NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-416FL V 50V CC I 100mA C(MAX.) R 1.0k 1 DTC113ZM DTC113ZEB R (VMT3) (EMT3F) 10k 2 SOT-416 SOT-323FL llFeatures 1) Built-In Biasing Resistors, R = 1k, R = 10k 1 2 DTC113ZE DTC113ZUB 2) Built-in bias resistors enable the configuration of (EMT3) (UMT3F) an inverter circuit without connecting external SOT-323 SOT-346 input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA113Z series llApplication INVERTER, INTERFACE, DRIVER DTC113ZUA DTC113ZKA (UMT3) (SMT3) llInner circuit DTC113ZM/ DTC113ZEB/ DTC113ZUB DTC113ZE/ DTC113ZUA/ DTC113ZKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC113ZM SOT-723 1212 T2L 180 8 8000 E21 DTC113ZEB SOT-416FL 1616 TL 180 8 3000 E21 DTC113ZE SOT-416 1616 TL 180 8 3000 E21 DTC113ZUB SOT-323FL 2021 TL 180 8 3000 121 DTC113ZUA SOT-323 2021 T106 180 8 3000 121 DTC113ZKA SOT-346 2928 T146 180 8 3000 E21 www.rohm.com 1/10 20170609 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. DTC113Z series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V 50 V CC V Input voltage -5 to 10 V IN I Output current 100 mA O *1 I Collector current 100 mA C(MAX) DTC113ZM 150 DTC113ZEB 150 DTC113ZE 150 *2 Power dissipation P mW D DTC113ZUB 200 DTC113ZUA 200 DTC113ZKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 3.0 - - I(on) O O V I = 10mA, I = 0.5mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 7.2 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 5mA 33 - - - I O O R Input resistance - 0.7 1.0 1.3 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/10 2018 ROHM Co., Ltd. All rights reserved. 20170609 - Rev.001