DTC114E series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value VMT3 EMT3F V 50V CC I 100mA C(MAX.) R 10k 1 DTC114EM DTC114EEB R (SC-105AA) (SC-89) 10k 2 EMT3 UMT3F llFeatures 1) Built-In Biasing Resistors, R = R = 10k 1 2 2) Built-in bias resistors enable the configuration of DTC114EE DTC114EUB an inverter circuit without connecting external SOT-416(SC-75A) (SC-85) input resistors (see inner circuit) . UMT3 SMT3 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA114E series DTC114EUA DTC114EKA SOT-323(SC-70) SOT-346(SC-59) llApplication INVERTER, INTERFACE, DRIVER llInner circuit DTC114EM/ DTC114EEB/ DTC114EUB DTC114EE/ DTC114EUA/ DTC114EKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC114EM VMT3 1212 T2L 180 8 8000 24 DTC114EEB EMT3F 1616 TL 180 8 3000 24 DTC114EE EMT3 1616 TL 180 8 3000 24 DTC114EUB UMT3F 2021 TL 180 8 3000 24 DTC114EUA UMT3 2021 T106 180 8 3000 24 DTC114EKA SMT3 2928 T146 180 8 3000 24 www.rohm.com 1/10 20150512 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTC114E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V 50 V CC V Input voltage -10 to 40 V IN I Output current 50 mA O *1 I Collector current 100 mA C(MAX) DTC114EM 150 DTC114EEB 150 DTC114EE 150 *2 Power dissipation P mW D DTC114EUB 200 DTC114EUA 200 DTC114EKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 2mA 3.0 - - I(on) O O V I / I = 10mA / 0.5mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 880 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 5mA 30 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. www.rohm.com 2/10 2015 ROHM Co., Ltd. All rights reserved. 20150512 - Rev.002