DTC114T series NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet llOutline Parameter Value SOT-723 SOT-416FL V 50V CEO I 100mA C R 10k 1 DTC114TM DTC114TEB (VMT3) (EMT3F) llFeatures 1) Built-In Biasing Resistor SOT-416 SOT-323FL 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . DTC114TE DTC114TUB 3) Only the on/off conditions need to be set (EMT3) (UMT3F) for operation, making the circuit design easy. SOT-323 SOT-346 4) Complementary PNP Types: DTA114T series llApplication DTC114TUA DTC114TKA (UMT3) (SMT3) INVERTER, INTERFACE,DRIVER llInner circuit DTC114TM/ DTC114TEB/ DTC114TUB DTC114TE/ DTC114TUA/ DTC114TKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC114TM SOT-723 1212 T2L 180 8 8000 04 DTC114TEB SOT-416FL 1616 TL 180 8 3000 04 DTC114TE SOT-416 1616 TL 180 8 3000 04 DTC114TUB SOT-323FL 2021 TL 180 8 3000 04 DTC114TUA SOT-323 2021 T106 180 8 3000 04 DTC114TKA SOT-346 2928 T146 180 8 3000 04 www.rohm.com 1/9 20160129 - Rev.003 2016 ROHM Co., Ltd. All rights reserved. DTC114T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C DTC114TM 150 DTC114TEB 150 DTC114TE 150 *1 P Power dissipation mW D DTC114TUB 200 DTC114TUA 200 DTC114TKA 200 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I Collector cut-off current V = 50V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB I = 10mA, I = 1mA Collector-emitter saturation voltage V - - 300 mV C B CE(sat) DC current gain h V = 5V, I = 1mA 100 250 600 - FE CE C Input resistance R - 7 10 13 k 1 V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Characteristics of built-in transistor www.rohm.com 2/9 20160129 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.