DTC114W series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value EMT3 UMT3 V 50V CC I 100mA C(MAX.) R 10k 1 DTC114WE DTC114WUA R SOT-416(SC-75A) SOT-323(SC-70) 4.7k 2 SMT3 llFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC114WKA an inverter circuit without connecting external SOT-346(SC-59) input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing llInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types: DTA114W series 6) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC114WE EMT3 1616 TL 180 8 3000 84 DTC114WUA UMT3 2021 T106 180 8 3000 84 DTC114WKA SMT3 2928 T146 180 8 3000 84 www.rohm.com 1/7 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs DTC114W series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 50 V CC Input voltage V -10 to 30 V IN I Output current 100 mA O *1 I Collector current 100 mA C(MAX) DTC114WE 150 *2 P Power dissipation DTC114WUA 200 mW D DTC114WKA 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.8 I(off) CC O Input voltage V V V = 0.3V, I = 2mA 3 - - I(on) O O Output voltage V I / I = 10mA / 0.5mA - 0.1 0.3 V O(on) O I I Input current V = 5V - - 0.88 mA I I I Output current V = 50V, V = 0V - - 0.5 A O(off) CC I G DC current gain V = 5V, I = 10mA 24 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.37 0.47 0.57 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2/7 20121023 - Rev.001 Not Recommended for New Designs