DTC115G series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value SOT-323 SOT-346 V 50V CEO I 100mA C R 100k DTC115GU3 DTC115GKA (UMT3) (SMT3) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 4) Complementary PNP Types: DTA115G series 5) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 DTC115GU3 2021 T106 180 8 3000 K29 (UMT3) DTC115GKA SOT-346 2928 T146 180 8 3000 K29 (NRND) (SMT3) www.rohm.com 1/5 20181011 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignDTC115G series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C DTC115GU3 200 *1 Power dissipation P mW D DTC115GKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 720A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 50V - - 0.5 A CBO CB I V = 4V Emitter cut-off current 30 - 58 A EBO EB Collector-emitter saturation voltage V I = 10mA, I = 0.5mA - - 0.3 V CE(sat) C B h V = 5V, I =5mA DC current gain 82 - - - FE CE C Emitter-base resistance R - 70 100 130 k V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint www.rohm.com 2/5 20181011 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.