X-On Electronics has gained recognition as a prominent supplier of DTC115GU3HZGT106 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC115GU3HZGT106 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC115GU3HZGT106 ROHM

DTC115GU3HZGT106 electronic component of ROHM
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Part No.DTC115GU3HZGT106
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased Automotive NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) - DTC115GU3HZG is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting ex
Datasheet: DTC115GU3HZGT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.261 ea
Line Total: USD 0.26 
Availability - 2909
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 DTC115GU3HZGT106 More Buying Options & Price Grid(s)

Availability Price Quantity
2909
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 0.261
10 : USD 0.1587
100 : USD 0.0724
1000 : USD 0.0661
3000 : USD 0.0501
9000 : USD 0.0437
24000 : USD 0.0426
45000 : USD 0.0394
99000 : USD 0.0384

Specifications

   
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We are delighted to provide the DTC115GU3HZGT106 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC115GU3HZGT106 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

DTC115GU3 HZG NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-323 V 50V CEO SC-70 I 100mA C R 100k (UMT3) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Complementary PNP Types: DTA115GU3 HZG 5) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 DTC115GU3 HZG 2021 T106 180 8 3000 K29 (UMT3) www.rohm.com 1/4 20190128 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. DTC115GU3 HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 720A 5 - - V EBO E I V = 50V Collector cut-off current - - 0.5 A CBO CB I Emitter cut-off current V = 4V 30 - 58 A EBO EB Collector-emitter saturation voltage V I = 10mA, I = 0.5mA - - 0.3 V CE(sat) C B h DC current gain V = 5V, I =5mA 82 - - - FE CE C Emitter-base resistance R - 70 100 130 k V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/4 20190128 - Rev.001

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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