X-On Electronics has gained recognition as a prominent supplier of DTC115GU3T106 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC115GU3T106 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC115GU3T106 ROHM

DTC115GU3T106 electronic component of ROHM
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Part No.DTC115GU3T106
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased NPN 50 VCEO 0.1A SOT-323
Datasheet: DTC115GU3T106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1298 ea
Line Total: USD 0.13 
Availability - 15527
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 DTC115GU3T106 More Buying Options & Price Grid(s)

Availability Price Quantity
15527
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1298
10 : USD 0.0902
100 : USD 0.0396
1000 : USD 0.0363
3000 : USD 0.0264
24000 : USD 0.022
45000 : USD 0.0209
99000 : USD 0.0198

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
Maximum Operating Frequency
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Emitter- Base Voltage Vebo
Brand
Channel Mode
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTC115GU3T106 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC115GU3T106 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

DTC115G series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value SOT-323 SOT-346 V 50V CEO I 100mA C R 100k DTC115GU3 DTC115GKA (UMT3) (SMT3) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 4) Complementary PNP Types: DTA115G series 5) Lead Free/RoHS Compliant. llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 DTC115GU3 2021 T106 180 8 3000 K29 (UMT3) DTC115GKA SOT-346 2928 T146 180 8 3000 K29 (NRND) (SMT3) www.rohm.com 1/5 20181011 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignDTC115G series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C DTC115GU3 200 *1 Power dissipation P mW D DTC115GKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 720A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 50V - - 0.5 A CBO CB I V = 4V Emitter cut-off current 30 - 58 A EBO EB Collector-emitter saturation voltage V I = 10mA, I = 0.5mA - - 0.3 V CE(sat) C B h V = 5V, I =5mA DC current gain 82 - - - FE CE C Emitter-base resistance R - 70 100 130 k V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint www.rohm.com 2/5 20181011 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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