DTC115GUA NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet llOutline Parameter Value SOT-323 V 50V CEO SC-70 I 100mA C R 100k (UMT3) llFeatures llInner circuit 1) Built-In Biasing Resistors, R = 100k 2) Complementary PNP Types: DTA115GUA llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 DTC115GUA 2021 T106 180 8 3000 K29 (UMT3) www.rohm.com 1/4 20160403 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. DTC115GUA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 72A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I Emitter cut-off current V = 4V 30 - 58 A EBO EB Collector-emitter saturation voltage V I = 5mA, I = 0.25mA - - 300 mV CE(sat) C B h DC current gain V = 5V, I =5mA 82 - - - FE CE C Emitter-base resistance R - 70 100 130 k V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Characteristics of built-in transistor www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/4 20160403 - Rev.002