X-On Electronics has gained recognition as a prominent supplier of DTC115TMT2L Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC115TMT2L Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC115TMT2L ROHM

DTC115TMT2L electronic component of ROHM
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Part No.DTC115TMT2L
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DIGITAL NPN
Datasheet: DTC115TMT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
860: USD 0.0473 ea
Line Total: USD 40.68 
Availability - 15083
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ: 860  Multiples: 1
Pack Size: 1

 DTC115TMT2L More Buying Options & Price Grid(s)

Availability Price Quantity
7367
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 2084
Multiples : 1
2084 : USD 0.0456
2500 : USD 0.0442
5000 : USD 0.043

15083
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 860
Multiples : 1
860 : USD 0.0473
1000 : USD 0.0472
2000 : USD 0.0415
8000 : USD 0.0375

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTC115TMT2L from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC115TMT2L and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

DTC115T series Datasheet NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-323 V 50V CEO I 100mA C R 100k DTC115TM DTC115TUA (VMT3) (UMT3) llFeatures 1) Built-In Biasing Resistors, R = 100k 1 llApplication 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external INVERTER, INTERFACE, DRIVER input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA115T series llInner circuit DTC115TM DTC115TUA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTC115TM 1212 T2L 180 8 8000 09 (VMT3) SOT-323 DTC115TUA 2021 T106 180 8 3000 09 (UMT3) www.rohm.com 1/5 20160403 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. DTC115T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO *1 I Collector current 100 mA C DTC115TM 150 *2 P Power dissipation mW D DTC115TUA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 50V - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 1mA, I = 0.1mA - - 300 mV CE(sat) C B h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 70 100 130 k 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 20160403 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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