X-On Electronics has gained recognition as a prominent supplier of DTC124GUAT106 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC124GUAT106 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC124GUAT106 ROHM

DTC124GUAT106 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No. DTC124GUAT106
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased NPN 50V 100MA
Datasheet: DTC124GUAT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2036 ea
Line Total: USD 0.2 
Availability - 8705
Ship by Wed. 11 Sep to Fri. 13 Sep
MOQ: 1  Multiples: 1
Pack Size: 1

 DTC124GUAT106 More Buying Options & Price Grid(s)

Availability Price Quantity
8705
Ship by Wed. 11 Sep to Fri. 13 Sep
MOQ : 1
Multiples : 1
1 : USD 0.2036
10 : USD 0.1368
100 : USD 0.0575
1000 : USD 0.0414
3000 : USD 0.0391
9000 : USD 0.0311

2279
Ship by Thu. 05 Sep to Wed. 11 Sep
MOQ : 396
Multiples : 1
396 : USD 0.1027
500 : USD 0.0857
1000 : USD 0.0595
2000 : USD 0.0524

2549
Ship by Thu. 05 Sep to Wed. 11 Sep
MOQ : 2174
Multiples : 1
2174 : USD 0.0437
2500 : USD 0.0424

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTC124GUAT106 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC124GUAT106 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

DTC124GUA Datasheet NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet llOutline Parameter Value SOT-323 V 50V CEO SC-70 I 100mA C R 22k (UMT3) llFeatures llInner circuit 1) Built-In Biasing Resistors, R = 22k llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 DTC124GUA 2021 T106 180 8 3000 K25 (UMT3) www.rohm.com www.rohm.com 1/4 20161028 - Rev.002 201 20156 R ROHM CoOHM Co., Ltd.., Ltd All r. All rights reserights resevred.ved.Data Sheet DTC124GUA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 330A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I Emitter cut-off current V = 4V 140 - 260 A EBO EB Collector-emitter saturation voltage V I = 10mA, I = 0.5mA - - 300 mV CE(sat) C B h DC current gain V = 5V, I =5mA 56 - - - FE CE C Emitter-base resistance R - 15.4 22 28.6 k V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Characteristics of built-in transistor www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/4 20161028 - Rev.002 www.rohm.com 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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