DTC125T series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value UMT3 SMT3 V 50V CEO I 100mA C R 200k 1 DTC125TUA DTC125TKA SOT-323(SC-70) SOT-346(SC-59) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. B: BASE 5) Complementary PNP Types: DTA125T series C: COLLECTOR 6) Lead Free/RoHS Compliant. E: EMITTER llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC125TUA UMT3 2021 T106 180 8 3000 0A DTC125TKA SMT3 2928 T146 180 8 3000 0A www.rohm.com 1/5 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs DTC125T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C DTC125TUA 200 *1 P Power dissipation mW D DTC125TKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 50V - - 0.5 A CBO CB I V = 4V Emitter cut-off current - - 0.5 A EBO EB Collector-emitter saturation voltage V I / I = 0.5mA / 0.05mA - - 0.3 V CE(sat) C B h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 140 200 260 k 1 V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com 2/5 2012 ROHM Co., Ltd. All rights reserved. 20121023 - Rev.001 Not Recommended for New Designs