DTC143EEFRATL ROHM

DTC143T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) llOutline Parameter Value VMT3 EMT3F V 50V CEO I 100mA C R 4.7k 1 DTC143TM DTC143TEB (SC-105AA) (SC-89) EMT3 UMT3F llFeatures 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC143TE DTC143TUB an inverter circuit without connecting external SOT-416(SC-75A) (SC-85) input resistors (see inner circuit) . UMT3 SMT3 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. DTC143TUA DTC143TKA 4) Only the on/off conditions need to be set SOT-323(SC-70) SOT-346(SC-59) for operation, making the circuit design easy. 5) Complementary PNP Types: DTA143T series 6) Complex transistors: EMH3/ UMH3N/ IMH3A/ llInner circuit EMG3/ UMG3N/ FMG3A PNP type 7) Lead Free/RoHS Compliant. B: BASE llApplication C: COLLECTOR Switching circuit, Inverter circuit, Interface circuit, E: EMITTER Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC143TM VMT3 1212 T2L 180 8 8000 03 DTC143TEB EMT3F 1616 TL 180 8 3000 03 DTC143TE EMT3 1616 TL 180 8 3000 03 DTC143TUB UMT3F 2021 TL 180 8 3000 03 DTC143TUA UMT3 2021 T106 180 8 3000 03 DTC143TKA SMT3 2928 T146 180 8 3000 03 www.rohm.com 1/9 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. DTC143T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C DTC143TM 150 DTC143TEB 150 DTC143TE 150 *1 P Power dissipation mW D DTC143TUB 200 DTC143TUA 200 DTC143TKA 200 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I Collector cut-off current V = 50V - - 0.5 A CBO CB Emitter cut-off current I V = 4V - - 0.5 A EBO EB I / I = 5mA / 0.25mA Collector-emitter saturation voltage V - - 0.15 V C B CE(sat) DC current gain h V = 5V, I = 1mA 100 250 600 - FE CE C Input resistance R - 3.5 4.7 5.9 k 1 V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com 2/9 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved.