X-On Electronics has gained recognition as a prominent supplier of DTC143TUAFRAT106 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC143TUAFRAT106 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC143TUAFRAT106 ROHM

Name: DTC143TUAFRAT106
Brand: ROHM
SKU: DTC143TUAFRAT106_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

DTC143TUAFRAT106 electronic component of ROHM

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See Product Specifications

Part No.	DTC143TUAFRAT106
Manufacturer:	ROHM
Category:	Bipolar Transistors - Pre-Biased
Description:	DIGITAL TRANS, NPN, AECQ101, SOT-323
Datasheet:	DTC143TUAFRAT106 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.3908 ea
Line Total: USD 1.95

Availability - 0

MOQ: 5 Multiples: 1
Pack Size: 1

DTC143TUAFRAT106 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 26 Dec to Wed. 01 Jan MOQ : 5 Multiples : 1	5 : USD 0.3908 10 : USD 0.2539 100 : USD 0.1349 500 : USD 0.1124 1000 : USD 0.0866 5000 : USD 0.0716

Specifications

Manufacturer ROHM ROHM
Product Category Bipolar Transistors - Pre-Biased Bipolar Transistors - Pre-Biased
Brand ROHM ROHM
Digital Transistor Polarity Single NPN Single NPN
Collector Emitter Voltage Vbrceo 50 V 50 V
Continuous Collector Current Ic 100 mA 100 mA
Base Input Resistor R1 4.7Kohm 4.7Kohm
Rf Transistor Case SOT - 323 SOT - 323
No. Of Pins 3 Pin 3 Pin
Automotive Qualification Standard AEC - Q101 AEC - Q101
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (15 - Jan - 2018) No SVHC (15 - Jan - 2018)

We are delighted to provide the DTC143TUAFRAT106 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC143TUAFRAT106 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

DTC143TUA FRA NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-323 V 50V CEO SC-70 I 100mA C R 4.7k 1 (UMT3) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA143TUA FRA llApplication INVERTER, INTERFACE,DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 DTC143TUA FRA 2021 T106 180 8 3000 03 (UMT3) www.rohm.com 1/4 20161024 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTC143TUA FRA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I Emitter cut-off current V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 0.25mA - - 150 mV CE(sat) C B h DC current gain V = 5V, I = 1mA 100 250 600 - FE CE C R Input resistance - 3.5 4.7 5.9 k 1 V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Characteristics of built-in transistor www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/4 20161024 - Rev.001

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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