DTC143X series NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet llOutline Parameter Value VMT3 EMT3F V 50V CC I 100mA C(MAX.) R 4.7k 1 DTC143XM DTC143XEB R (SC-105AA) (SC-89) 10k 2 EMT3 UMT3F llFeatures 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC143XE DTC143XUB an inverter circuit without connecting external SOT-416(SC-75A) (SC-85) input resistors (see inner circuit) . UMT3 SMT3 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. DTC143XUA DTC143XKA 4) Only the on/off conditions need to be set SOT-323(SC-70) SOT-346(SC-59) for operation, making the circuit design easy. 5) Complementary PNP Types: DTA143X series 6) Lead Free/RoHS Compliant. llInner circuit llApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC143XM VMT3 1212 T2L 180 8 8000 43 DTC143XEB EMT3F 1616 TL 180 8 3000 43 DTC143XE EMT3 1616 TL 180 8 3000 43 DTC143XUB UMT3F 2021 TL 180 8 3000 43 DTC143XUA UMT3 2021 T106 180 8 3000 43 DTC143XKA SMT3 2928 T146 180 8 3000 43 www.rohm.com 1/10 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. DTC143X series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V 50 V CC V Input voltage -7 to 20 V IN I Output current 100 mA O *1 I Collector current 100 mA C(MAX) DTC143XM 150 DTC143XEB 150 DTC143XE 150 *2 Power dissipation P mW D DTC143XUB 200 DTC143XUA 200 DTC143XKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 2.5 - - I(on) O O V I / I = 10mA / 0.5mA Output voltage - 0.1 0.3 V O(on) O I I Input current V = 5V - - 1.8 mA I I I V = 50V, V = 0V Output current - - 0.5 A O(off) CC I G DC current gain V = 5V, I = 10mA 30 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 1.7 2.1 2.6 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2/10 2012 ROHM Co., Ltd. All rights reserved. 20121023 - Rev.001