X-On Electronics has gained recognition as a prominent supplier of DTC144GUAT106 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC144GUAT106 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC144GUAT106 ROHM

DTC144GUAT106 electronic component of ROHM
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See Product Specifications
Part No.DTC144GUAT106
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased NPN 50V 100MA
Datasheet: DTC144GUAT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1107: USD 0.0367 ea
Line Total: USD 40.63 
Availability - 0
MOQ: 1107  Multiples: 1107
Pack Size: 1107

 DTC144GUAT106 More Buying Options & Price Grid(s)

Availability Price Quantity
2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1102
Multiples : 1
1102 : USD 0.0369
2000 : USD 0.034
3000 : USD 0.033

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTC144GUAT106 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC144GUAT106 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

DTC144G series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) llOutline Parameter Value SOT-416 SOT-323 V 50V CEO I 100mA C R 47k DTC144GE DTC144GUA (EMT3) (UMT3) SOT-346 llFeatures 1)Built-In Biasing Resistor 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing DTC144GKA (SMT3) of the input. They also have the advantage of completely eliminating parasitic effects. 3)Complementary PNP Types: DTA144G series llInner circuit llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-416 DTC144GE 1616 TL 180 8 3000 K26 (EMT3) SOT-323 DTC144GUA 2021 T106 180 8 3000 K26 (UMT3) SOT-346 DTC144GKA 2928 T146 180 8 3000 K26 (SMT3) www.rohm.com 1/6 20151015 - Rev.004 2015 ROHM Co., Ltd. All rights reserved. DTC144G series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C DTC144GE 150 *1 P Power dissipation DTC144GUA 200 mW D DTC144GKA 200 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 160A 5 - - V EBO E Collector cut-off current I V = 50V - - 500 nA CBO CB Emitter cut-off current I V = 4V 65 - 130 A EBO EB I = 10mA, I = 0.5mA Collector-emitter saturation voltage V - - 300 mV C B CE(sat) DC current gain h V = 5V, I =5mA 68 - - - FE CE C Emitter-base resistance R - 32.9 47 61.1 k V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Characteristics of built-in transistor. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151015 - Rev.004

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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