X-On Electronics has gained recognition as a prominent supplier of DTC144TCAT116 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC144TCAT116 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC144TCAT116 ROHM

DTC144TCAT116 electronic component of ROHM
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See Product Specifications
Part No.DTC144TCAT116
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased NPN 50V 0.1A 47kO SOT-23
Datasheet: DTC144TCAT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2046 ea
Line Total: USD 0.2 
Availability - 2429
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 DTC144TCAT116 More Buying Options & Price Grid(s)

Availability Price Quantity
2429
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2046
10 : USD 0.1353
100 : USD 0.0616
1000 : USD 0.0561
3000 : USD 0.0462
9000 : USD 0.0418
24000 : USD 0.0407
45000 : USD 0.0374
99000 : USD 0.0352

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Emitter- Base Voltage Vebo
Brand
Channel Mode
Maximum Dc Collector Current
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTC144TCAT116 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC144TCAT116 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

DTC144TCA NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet llOutline Parameter Value SOT-23 V 50V CEO I 100mA C R 47k 1 (SST3) llFeatures llInner circuit 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA144TCA llApplication INVERTER, INTERFACE,DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTC144TCA 2924 T116 180 8 3000 06 (SST3) www.rohm.com 1/4 20170919 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. DTC144TCA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 5 - - V EBO E Collector cut-off current I V = 50V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB I = 10mA, I = 1mA Collector-emitter saturation voltage V - - 300 mV CE(sat) C B h DC current gain V = 5V, I = 1mA 100 250 600 - FE CE C R Input resistance - 32.9 47 61.1 k 1 V = 10V, I = -5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). *3 Characteristics of built-in transistor www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 2/4 20170919 - Rev.001

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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