DTC144TKAT146 ROHM

DTC144T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) llOutline Parameter Value VMT3 EMT3 V 50V CEO I 100mA C R 47k 1 DTC144TM DTC144TE (SC-105AA) SOT-416(SC-75A) UMT3 SMT3 llFeatures 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC144TUA DTC144TKA an inverter circuit without connecting external SOT-323(SC-70) SOT-346(SC-59) input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing llInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types: DTA144T series 6) Complex transistors: UMH14N/ IMH14A/ EMH15/ IMH15A NPN type 7) Lead Free/RoHS Compliant. llApplication B: BASE Switching circuit, Inverter circuit, Interface circuit, C: COLLECTOR Driver circuit E: EMITTER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC144TM VMT3 1212 T2L 180 8 8000 06 DTC144TE EMT3 1616 TL 180 8 3000 06 DTC144TUA UMT3 2021 T106 180 8 3000 06 DTC144TKA SMT3 2928 T146 180 8 3000 06 www.rohm.com 1/7 20121023 - Rev.001 2012 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs DTC144T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C DTC144TM 150 DTC144TE 150 *1 P Power dissipation mW D DTC144TUA 200 DTC144TKA 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I V = 50V Collector cut-off current - - 0.5 A CBO CB I Emitter cut-off current V = 4V - - 0.5 A EBO EB Collector-emitter saturation voltage V I / I = 5mA / 0.5mA - - 0.3 V CE(sat) C B h DC current gain V = 5V, I = 1mA 100 250 600 - FE CE C R Input resistance - 32.9 47 61.1 k 1 V = 10V, I = -5mA, CE E *2 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com 2/7 2012 ROHM Co., Ltd. All rights reserved. 20121023 - Rev.001 Not Recommended for New Designs