X-On Electronics has gained recognition as a prominent supplier of DTC144TMT2L Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC144TMT2L Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC144TMT2L ROHM

DTC144TMT2L electronic component of ROHM
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See Product Specifications
Part No.DTC144TMT2L
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased TRANS DIGI BJT NPN 50V 100MA 3PIN
Datasheet: DTC144TMT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3344 ea
Line Total: USD 0.33 
Availability - 7335
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7335
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3344
10 : USD 0.2288
100 : USD 0.1452
1000 : USD 0.066
2500 : USD 0.0583
8000 : USD 0.0451
24000 : USD 0.0407
48000 : USD 0.0396
96000 : USD 0.0363

15423
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 860
Multiples : 1
860 : USD 0.0473
1000 : USD 0.0472
2000 : USD 0.0415
8000 : USD 0.0374

7630
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2084
Multiples : 1
2084 : USD 0.0437

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTC144TMT2L from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC144TMT2L and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTC144T series Datasheet NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-323 V 50V CEO I 100mA C R 47k DTC144TM DTC144TUA (VMT3) (UMT3) llFeatures 1) Built-In Biasing Resistors, R = 47k 1 llApplication 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external INVERTER, INTERFACE, DRIVER input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA144T series llInner circuit DTC144TM DTC144TUA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTC144TM 1212 T2L 180 8 8000 06 (VMT3) SOT-323 DTC144TUA 2021 T106 180 8 3000 06 (UMT3) www.rohm.com 1/5 20160905 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. DTC144T series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO *1 I Collector current 100 mA C DTC144TM 150 *2 P Power dissipation mW D DTC144TUA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 50V - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 0.5mA - - 300 mV CE(sat) C B h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 32.9 47 61.1 k 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 20160905 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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RHM
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