DTC614TU / DTC614TK Transistors Digital transistors (built-in resistor) DTC614TU / DTC614TK z External dimensions (Unit : mm) z Features In addition to the features of regular digital transistors. 2.00.2 UMT3 1) Low saturation voltage, typically 1.30.1 0.90.1 <SC-70> VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these 0.65 0.65 0.2 0.70.1 (1) (2) transistors ideal for muting circuits. 2) These transistors can be used at high current levels, 00.1 IC=600mA. (3) +0.1 0.3 0 0.150.05 (1) Emitter Each lead has same dimensions z Structure (2) Base Abbreviated symbol : R04 (3) Collector NPN digital transistor (Built-in resistor type) 2.90.2 SMT3 +0.2 1.1 1.90.2 0.1 <SC-59> 0.95 0.95 0.80.1 z Equivalent circuit (1) (2) (3) C B +0.1 +0.1 0.4 0.15 0.05 0.06 R E (1) Emitter Each lead has same dimensions R=10k (2) Base Abbreviated symbol : R04 (3) Collector B : Base C : Collector E : Emitter z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 12 V Collector current IC 600 mA Collector power dissipation PC 200 mW Tj 150 Junction temperature C Storage temperature Tstg 55 to +150 C Rev.A 1/2 +0.2 1.250.1 1.6 0.1 2.80.2 2.10.1 0.1Min. 0.3Min.DTC614TU / DTC614TK Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 20 V IC=50A Collector-emitter breakdown voltage BVCEO 20 V IC=1mA Emitter-base breakdown voltage BV 12 I =50A EBO V E Collector cutoff current ICBO 0.5 A VCB=20V Emitter cutoff current IEBO 0.5 A VEB=12V Collector-emitter saturation voltage V 40 I / I =50mA / 2.5mA CE (sat) 150 mV C B DC current transfer ratio hFE 820 2700 VCE=5V, IC=50mA Input resistance R1 710 13 k f 150 V =10V, I = 50mA, f=100MHz Transition frequency T MHz CE E OutputO resistance Ron 0.9 VI=5V, RL=1k, f =1KHz Transition frequency of the device. z Packaging specifications and hFE Package UMT3 SMT3 Packaging type Taping Taping Type Code T106 T146 Basic ordering unit (pieces) 3000 3000 DTC614TU DTC614TK z Electrical characteristic curves 10000 10000 1000 VCE=5V IC / IB=20 Ta=25C f=1kHz Ta=100C RL=1k Ta=25C hFE=250 (5V / 50mA) 1000 100 Ta= 40C 1000 100 10 Ta=100C Ta=25C Ta= 40C 10 1 100 1 0.1 0.1 1 10 100 1000 0.1 1 10 100 1000 0.1 1 10 100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) INPUT VOLTAGE : VI (V) Fig.2 Collector-Emitter Saturation Fig.1 DC Current Gain vs. Fig.3O resistance vs. Input Voltage Collector Current Voltage vs. Collector Current z Ron measurement circuit v0 Ron= RL RL=1k viv0 Input vi Output 100mV V v0 (rms) f=1kHz vI Fig.4 OutputO resistance (Ron) measurement circuit Rev.A 2/2 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) ON RESISTANCE : Ron ()