DTC643TU / DTC643TK Transistors Digital transistors (built-in resistor) DTC643TU / DTC643TK External dimensions (Unit : mm) Features In addition to the features of regular digital transistors. 2.00.2 UMT3 1) Low saturation voltage, typically 1.30.1 0.90.1 <SC-70> VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these 0.65 0.65 0.2 0.70.1 (1) (2) transistors ideal for muting circuits. 2) These transistors can be used at high current levels, 00.1 IC=600mA. (3) +0.1 0.3 0 0.150.05 (1) Emitter Each lead has same dimensions Structure (2) Base Abbreviated symbol : R03 (3) Collector NPN digital transistor (Built-in resistor type) 2.90.2 SMT3 +0.2 1.1 1.90.2 0.1 <SC-59> 0.95 0.95 0.80.1 Equivalent circuit (1) (2) (3) C B +0.1 +0.1 0.4 0.15 0.05 0.06 R E (1) Emitter Each lead has same dimensions R=4.7k (2) Base Abbreviated symbol : R03 (3) Collector B : Base C : Collector E : Emitter Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 12 V Collector current IC 600 mA Collector power dissipation PC 200 mW Tj 150 C Junction temperature Storage temperature Tstg 55 to +150 C 1/2 +0.2 1.250.1 1.6 0.1 2.80.2 2.10.1 0.3Min. 0.1Min.DTC643TU / DTC643TK Transistors Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 20 VIC=50A Collector-emitter breakdown voltage BV 20 V I =1mA CEO C Emitter-base breakdown voltage BVEBO 12 V IE=50A Collector cutoff current ICBO 0.5 A VCB=20V I 0.5 A V =12V Emitter cutoff current EBO EB Collector-emitter saturation voltage VCE (sat) 40 150 mV IC / IB=50mA / 2.5mA DC current transfer ratio hFE 820 2700 VCE=5V, IC=50mA Input resistance R 3.29 4.7 6.11 k 1 Transition frequency fT 150 MHz VCE=10V, IE= 50mA, f=100MHz OutputO resistance Ron 0.55 VI=5V, RL=1k, f =1MHz Transition frequency of the device. Packaging specifications and hFE Package UMT3 SMT3 Packaging type Taping Taping Type Code T106 T146 Basic ordering unit (pieces) 3000 3000 DTC643TU DTC643TK Electrical characteristic curves 10000 10000 1000 VCE=5V IC / IB=20 / 1 Ta=25C f=1kHz RL=1k hFE=1500 (5V / 50mA) 1000 100 100C 25C 1000 100 10 40C 100C 25C 1 10 40C 100 1 0.1 0.1 1 10 100 1000 0.1 1 10 100 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : I (mA) INPUT VOLTAGE : VI (V) C Fig.1 DC Current Gain vs. Fig.3O resistance vs. Input Voltage Fig.2 Collector-Emitter Saturation Collector Current Voltage vs. Collector Current Ron measurement circuit v0 Ron= RL RL=1k viv0 Input vi Output 100mV V v0 (rms) f=1kHz vI Fig.4 OutputO resistance (Ron) measurement circuit 2/2 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) ON RESISTANCE : Ron ()