X-On Electronics has gained recognition as a prominent supplier of DTD113EKT146 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTD113EKT146 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTD113EKT146 ROHM

Hot DTD113EKT146 electronic component of ROHM
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Part No.DTD113EKT146
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased NPN 50V 500MA
Datasheet: DTD113EKT146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1138 ea
Line Total: USD 0.57 
Availability - 2898
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2898
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1138
50 : USD 0.0911
150 : USD 0.0799
500 : USD 0.0714
3000 : USD 0.0645
6000 : USD 0.0612

1636
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4741
10 : USD 0.3014
100 : USD 0.1507
1000 : USD 0.1331
3000 : USD 0.0968
24000 : USD 0.0957
45000 : USD 0.0913

973
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 468
Multiples : 1
468 : USD 0.218
500 : USD 0.2102
1000 : USD 0.2033

6332
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 612
Multiples : 1
612 : USD 0.0664
1000 : USD 0.0656
2000 : USD 0.0644
3000 : USD 0.0642
6000 : USD 0.0636

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
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Typical Resistor Ratio
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DC Collector/Base Gain hFE Min
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Power Dissipation
Dc Collectorbase Gain Hfe Min
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Hts Code
Mxhts
Pd - Power Dissipation
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We are delighted to provide the DTD113EKT146 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTD113EKT146 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTD113EK Datasheet NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline SMT3 Parameter Value OUT V 50V CC IN I 500mA C(MAX.) GND R 1k W 1 DTD113EK R 1k W SOT-346 (SC-59) 2 lFeatures lInner circuit 1) Built-In Biasing Resistors, R1 = R2 = 1k W. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types :DTB113EK series 6) Lead Free/RoHS Compliant. l Application Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) DTD113EK SMT3 2928 T146 180 8 3,000 F21 www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.D 1/5Data Sheet DTD113EK lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Supply voltage 50 V CC V V Input voltage -10 to +10 IN *1 500 mA Collector current I C *2 200 mW Power dissipation P D T 150 C Junction temperature j T C Range of storage temperature -55 to +150 stg lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100mA - - 0.5 I(off) CC O Input voltage V V = 0.3V, I = 20mA V 3.0 - - O O I(on) V I / I = 50mA / 2.5mA Output voltage - 0.1 0.3 V O I O(on) I V = 5V Input current - - 7.2 mA I I I V = 50V, V = 0V Output current - - 0.5 mA O(off) CC I V = 5V, I = 50mA DC current gain G 33 - - - O O I Input resistance R - 0.7 1 1.3 k W 1 R /R Resistance ratio - 0.8 1 1.2 - 2 1 V = 10V, I = -50mA, *1 CE E Transition frequency f - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.D 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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