X-On Electronics has gained recognition as a prominent supplier of DTD113ZCHZGT116 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTD113ZCHZGT116 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTD113ZCHZGT116 ROHM

DTD113ZCHZGT116 electronic component of ROHM
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Part No.DTD113ZCHZGT116
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased NPN SOT-23 1kO Input Resist
Datasheet: DTD113ZCHZGT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1771 ea
Line Total: USD 0.18 
Availability - 8905
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8905
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1771
10 : USD 0.1166
100 : USD 0.0528
1000 : USD 0.0473
3000 : USD 0.0374
9000 : USD 0.033
24000 : USD 0.0308
45000 : USD 0.0308
99000 : USD 0.0286

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Continuous Collector Current
Maximum Operating Temperature
Packaging
Qualification
Output Voltage
Brand
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTD113ZCHZGT116 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTD113ZCHZGT116 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTD113ZC HZG 500mA/50V Digital transistor (with built-in resistors) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-23 V 50V CC I 500mA C(MAX.) R 1k 1 R 10k (SST3) 2 llFeatures llInner circuit 1) Built-In Biasing Resistors, R = 1k, R = 10k 1 2 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Type: DTB113ZC HZG llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTD113ZC HZG 2924 T116 180 8 3000 G21 (SST3) www.rohm.com 1/5 20160701 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTD113ZC HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -5 to 10 V IN *1 I Collector current 500 mA C(MAX) *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 1.5 - - I(on) O O V Output voltage I = 50mA, I = 2.5mA - 100 300 mV O(on) O I I Input current V = 5V - - 7.2 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I *3 G DC current gain V = 5V, I = 50mA 82 - - - I O O R Input resistance - 0.7 1 1.3 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = 10V, I = -50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 Pulsed www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 20160701 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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